PART |
Description |
Maker |
HC05 MC68HC705X32 |
Bipolar Transistor; Transistor Polarity:Dual P Channel; Power Dissipation:20W; DC Current Gain Min (hfe):25; Collector Current:1A; DC Current Gain Max (hfe):200; Power (Ptot):20W HCMOS microcontroller unit
|
Motorola, Inc.
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STK400-030 STK401-340 STK400-010 STK400-020 STK400 |
AF Power Amplifier (Split Power Supply) (20W 20W 20W, THD = 0.4%)
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
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STK401-070 STK401-140 STK400-010 STK400-030 STK400 |
AF Power Amplifier (Split Power Supply) (40 W 40 W min, THD = 0.4%) AF Power Amplifier (Split Power Supply) (20W 20W 20W, THD = 0.4%)
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SANYO[Sanyo Semicon Device]
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2SA1666YI-UL 2SA1666YI-TR 2SC4903YL-UL 2SA1666YI-0 |
200 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR 100 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.2 A, 30 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET 0.2 A, 30 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET 0.2 A, 50 V, 12 ohm, P-CHANNEL, Si, POWER, MOSFET 0.2 A, 20 V, 9 ohm, P-CHANNEL, Si, POWER, MOSFET 0.2 A, 50 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET 0.2 A, 20 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET UHF BAND, Si, RF SMALL SIGNAL, FET 3000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1 A, 60 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR 50 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET 100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.3 A, 100 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92 2 A, 20 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET 2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET 5 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
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Bourns, Inc. LEDtronics, Inc. Integrated Device Technology, Inc. Vishay Beyschlag Air Cost Control Mini-Circuits Moeller Electric, Corp. OSRAM GmbH Cooper Hand Tools KOA Speer Electronics,Inc. ProMOS Technologies, Inc.
|
CHF1206CNT500LW |
RESISTOR, 50 OHM 20W DC-3GHZ; Series:CHF1206; Resistance:50R; Tolerance, resistance: /-5%; Power rating:20W; Resistor element type:Thick Film; Case style:1206; Length / Height, external:3.048mm; Tolerance, :5%; Tolerance, -:5%; RoHS Compliant: Yes
|
BOURNS INC
|
STB6NA80 4233 STB6NA80-1 STB6NA80T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR N-CHANNEL Power MOSFET N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
BUZ100SL-4 |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28 20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http:// Siemens Semiconductor Group Infineon Technologies AG SIEMENS AG
|
BUZ100L C67078-S1354-A2 BUZ100LC67078-S1348-A2 BUZ |
N-Channel SIPMOS Power Transistor Omnifet: fully autoprotected Power MOSFET SIPMOS ? Power Transistor From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group] http://
|
IPB05N03LAG |
80 A, 25 V, 0.0078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB OptiMOS㈢2 Power-Transistor OptiMOS?2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
LM1875-TA5-T LM1875-TB5-T LM1875L-TA5-T LM187505 L |
20W AUDIO POWER AMPLIFIER
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UNISONIC TECHNOLOGIES CO LTD UTC[Unisonic Technologies]
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